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| VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 490 8.5x103 1.4 0.52 1100 V A A V m V Fast Recovery Diode 5SDF 05D2501 Doc. No. 5SYA1112-03 Jan. 03 * Patented free-floating silicon technology * Low switching losses * Optimized for use as snubber diode in GTO converters * Industry standard press-pack ceramic housing, hermetically cold-welded * Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Repetetive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Permanent DC voltage for 100 FIT failure rate Characteristic values Symbol Conditions VRRM VDClink VDClink f = 50 Hz, tp = 10ms, Tj = 125C Ambient cosmic radiation at sea level in open air. (100% Duty) Ambient cosmic radiation at sea level in open air. (5% Duty) min typ Value 2500 1100 1500 max 50 Unit V V V Unit mA Parameter Repetitive peak reverse current Symbol Conditions IRRM VR = VRRM, Tj = 125C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 10 typ 11 max 12 50 200 Unit kN m/s m/s Unit kg mm mm mm mm 2 2 Parameter Weight Housing thickness Pole-piece diameter Surface creepage distance Symbol Conditions m H DP DS min typ 0.25 26 34 max 30 Air strike distance Da 20 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDF 05D2501 On-state Maximum rated values 1) Parameter Max. average on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IFAVM Half sine wave, TC = 85 C min typ max 490 770 Unit A A A A2s A A2s Unit V V m Max. RMS on-state current IFRMS IFSM I2t IFSM I2t VR 0 V tp = 10 ms, Tj = 125C, 8.5x10 360x10 3 3 3 tp = 1 ms, Tj = 125C, VR 0 V 27x10 370x10 min typ max 1.9 1.4 0.52 3 Parameter On-state voltage Threshold voltage Slope resistance Symbol Conditions VF V(T0) rT IF = 1000 A, Tj = 125C Tj = 125C IT = 600...4000 A Turn-on Characteristic values Parameter Peak forward recovery voltage Symbol Conditions Vfr di/dt = 500 A/s, Tj = 125C min typ max 17 Unit V Turn-off Characteristic values Parameter Reverse recovery current Reverse recovery charge Turn-off energy Symbol Conditions IRM; Qrr Err di/dt = 250 A/s, Tj = 125 C, IF = 1000 A, VRM = 2500 V, RS = 5 , CS = 0.10 F min typ max 400 1150 -- Unit A C J ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1112-03 Jan. 03 page 2 of 5 5SDF 05D2501 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 125 125 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled typ max 40 80 80 8 16 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: ZthJC(t) = a Ri(1 - e -t/ i ) i =1 i Ri(K/kW) i(s) 1 20.950 0.3960 2 10.570 0.0720 3 7.150 0.0090 4 1.330 0.0044 Fig. 1 Transient thermal impedance junction-tocase. 5000 25C 125C 4000 IF (A) 3000 20 IFSM 200 40 oi dt 2 n 400 typ 30 300 (10 A2s) 3 max IFSM (kA) 2000 10 100 1000 Linearization with VF0 = 1.40 V and rF = 0.52 m 0 0 1 2 VF (V) 3 4 0 0.1 1 10 tp (ms) 0 100 Fig. 2 Forward current vs. forward voltage (typ. and max. values) and linear approximation of max. curve at 125C. Fig. 3 Surge current and fusing integral vs. pulse width (max. values) for non-repetitive, halfsinusoidal surge current pulses. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1112-03 Jan. 03 page 3 of 5 5SDF 05D2501 Fig. 4 Typical forward voltage waveform when the diode is turned on with a high di/dt. Fig. 5 Forward recovery voltage vs. turn-on di/dt (max. values). IRM Fig. 6 Typical current and voltage waveforms at turnoff with conventional RC snubber circuit. Fig. 7 Peak reverse recovery current vs. diF/dt, IF = 1000 A; Tj = Tjmax, limit values ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1112-03 Jan. 03 page 4 of 5 5SDF 05D2501 Fig. 8 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1112-03 Jan. 03 |
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